薄膜型锑化铟霍尔元件芯片测试系统的设计与实现

针对薄膜型锑化铟霍尔元件芯片性能测试,设计了一套霍尔元件芯片测试系统。系统主要由手动探针台、显微镜、探针卡、外加磁场、PLC以及测试软件组成,可以进行霍尔元件芯片的输入和输出电阻、不平衡电压以及霍尔电压的测试。测试系统稳定性好,重复度高,测试误差较小。手动探针台操作简单,测试方便,灵活性强,可分别测试4英寸硅片和3英寸铁氧体衬底制备的薄膜型锑化铟霍尔元件芯片,以较低成本满足了霍尔元件芯片研发过程中芯片测试的需求。     

An Artificial Autonomic Nervous System That Implements Heart and Pupil as Controlled by Artificial Sympathetic and Parasympathetic Nerves

The autonomic nervous system maintains homeostasis in organisms through complex neural pathways and responds adaptively to changes in the external and internal environment. The fabrication of an artificial autonomic nervous system is reported that replicates combined effects of sympathetic and parasympathetic nerves on cardiac activity and pupillary control, to mimic the regulation of autonomic nervous system to external changes. The artificial autonomic nerve-controlled pupil contraction and relaxation, modulating the rate of heartbeats for normal cardiac rhythm and arrhythmia as reflected by blink rates of a signal indicator. These functions are switched by using a parallel-channeled synaptic transistor with a special n-i-p heterostructure that has a 2D h-BN insulator in the middle to provide barrier against ion injection into the 2D MoS₂ bottom n-channel and enable short-term plasticity as induced by acetylcholine, and the electrochemical doping reaction occurred at the P3HT nanowire p-channels on top to enable relatively long-term plasticity as induced by noradrenaline. Low-energy consumption down to femtojoule and an ultrahigh paired-pulse facilitation index up to ≈455% are demonstrated. An artificial neural network based on device characteristics achieves a high recognition accuracy for electrocardiogram patterns. This study extends insights into artificial nerves-inspired biological signal processing and recognition.     

A high sensitivity localized surface plasmon resonance sensor based on D-shaped photonic crystal fiber for low refractive index detection

In this paper, a localized surface plasmon resonance (LSPR) refractive index sensor based on photonic crystal fiber (PCF) is proposed to solve the problem of low refractive index analyte detection. 31 silver nanowires are placed on the surface of the D-shaped PCF, which increases the contact area between the plasma material and the analyte. The simulation results indicate that the maximum sensitivity of the sensor reaches 16 400 nm/RIU, and the refractive index detection range is 1.26—1.33. It is proved that the sensor has a good prospect in low refractive index detection.     

A new model for PCBM phase segregation in P3HT:PCBM blends

The phase segregation in P3HT:PCBM blend films has been investigated from an experimental and theoretical viewpoint. Optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray diffraction show that thermal annealing of P3HT:PCBM blend films leads to the formation of PCBM aggregates. These aggregates are composed of dense randomly packed ∼50 nm PCBM crystallites with an overall aggregate density of ∼0.85 g cm⁻³. By applying the critical radius of nucleation for PCBM and the Stokes-Einstein equation for mobility of PCBM in a P3HT matrix, a model is developed which explains the formation of both crystallites and aggregates.     

Characterization of polymer bulk heterojunction photocell with unmodified C70 prepared with halogen-free solvent for indoor light harvesting

Although photocells are commonly characterized under AM1.5G 100 mW cm⁻² (1 sun) illumination, their performance under low light illumination is also important, because photocells are frequently used for indoor applications. In this study, polymer photocells based on a bulk heterojunction composite consisting of a low energy gap polymer PTB7 and unmodified C₇₀ prepared with a halogen-free solvent 1,2,4-trimethylbenzene have been characterized under the illumination of 1 sun or below. A typical photocell with the power conversion efficiency (PCE) of 4% at 1 sun shows the PCE of approximately 7% at 10⁻³ sun, which seems to fit for some indoor applications such as a permanent power source for a wireless sensor node. The sublinear dependence of short-circuit photocurrent on light intensity as well as the increase of fill-factor under low light illumination yields the increased efficiency under low light illumination. An analysis employing a one-diode equivalent circuit model suggests that the increased parallel resistance as well as the decreased saturation current of the diode under low light illumination accounts for the latter feature. It is also pointed out that the parallel resistance and/or the saturation current under dark strongly influence the PCE of a photocell under low light illumination. In addition, the dependence of the device performance on the light intensity is found to be useful for analyzing the effects of the thermal treatment and the PFN interlayer at cathode.     

Structural characteristics and microwave dielectric properties of Zn1−xBixVxW1−xO4-based ceramics for LTCC applications

Herein, the improvement of the microwave dielectric properties and sintering characteristics of Zn_1?xBi_xV_xW_1?xO₄(x = 0–0.15)-based ceramics is reported. The results showed that an appropriate amount of doping could not only reduce the optimum sintering temperature from 1100° to 900°C, but also enhance the densification of the microstructures and increase the Q×f value from 5351 to 42525 GHz. Additionally, various structural parameters including the phase composition, crystal structure, vibrational and chemical bond characteristics that are correlated with the dielectric properties were systematically investigated. By considering the chemical bond characteristics, the first-principles calculations and the acquired Raman spectra, the interaction between W-O is stronger than Zn-O in the ZnWO₄ structure, while the interaction between V-O is stronger than Bi-O in BiVO₄. Interestingly, when the Zn_0.97Bi_0.03V_0.03W_0.97O₄-based ceramics were sintered at 900 °C, improved microwave dielectric properties were acquired (ε_r =18.32, Q×f=42525 GHz, τ_f=?67.51 ppm/°C), which provides a promising candidate in low-temperature co-fired ceramics technology.     

单片式彩色LCOS微显芯片电路设计

介绍一种单片式彩色LCOS微显芯片的电路设计。这种LCOS芯片配置合适的光机及电路系统可用于单片式LCOS彩色背投电视或其它投影产品。与传统场序彩色LCOS微显芯片类似，该芯片的主要模块由行扫描驱动器、数据驱动器和象素驱动矩阵三大部分组成。不同的是二者的行寻址方式不同，传统场序彩色LCOS采用的是逐行扫描法，而此处介绍的彩色LCOS采用的是随机寻址方式，将红、绿、蓝三种数据几乎同时写入象素矩阵，配合滚动的光照显示彩色图像。单片式LCOS系统与三片式LCOS系统相比可以节省微显芯片及配套电路系统数目，从而大大节约成本，在背投电视和其他投影产品产业中有很大的实用价值。     

金属单向诱导横向晶化激光修饰多晶硅薄膜晶体管

对采用金属诱导单一方向横向晶化(metal induced unilaterally crystallization,MIUC)并结合激光后退火技术,以提高多晶硅薄膜晶体管的性能,进行了深入研究.MIUC薄膜晶体管已具有良好的器件性能和均匀性,再加以三倍频YAG激光退火后的MIUC薄膜晶体管,其场效应迁移率则可提高近一倍.器件的多种性能和参数的均匀性与所用修饰性的激光处理条件密切相关,具有规律性,故而是可控的,这为工业化技术的掌控提供了基础.     

用脉冲电源溅射ZnO薄膜时脉冲及工艺条件对靶电压的影响

用磁控溅射法制备ZnO∶Al透明导电膜时,降低靶电压可以减少溅射等离子体中被靶背反射回的中性离子和负氧离子对基片的轰击,提高薄膜的质量,降低薄膜电阻。本文研究了用中频脉冲直流溅射法和Zn∶Al合金靶反应溅射制备ZnO∶Al透明导电膜时,脉冲参数,如脉冲频率、反向脉冲幅度、反向脉冲时间、功率、氧氩比、溅射气压等工艺条件对靶电压的影响。结果表明,延长反向脉冲时间是降低靶电压的最有效方法。当反向时间由2μs增加到10μs时,靶电压降低了60%以上。